Ministry of Electronics and Information Technology
(MeitY)
Chips
to
Startup
C2S
Pre-RFP Stakeholder Consultation
Indigenous Design, Development, Qualification and Supply of SiC MOSFET Based Power Modules for Pilot Deployment in VSC-HVDC
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General Overview
Programme Background
MeitY, MoP and POWERGRID are jointly facilitating the indigenous design, development, qualification, validation and pilot deployment of Silicon Carbide (SiC) MOSFET-based power modules for Voltage Source Converter (VSC) based HVDC applications.
The initiative aims to build domestic capability across the power semiconductor value chain - device design, module engineering, fabrication, packaging, assembly, testing, qualification and system integration - to reduce dependence on imported technology for strategic grid applications. Successful demonstration in the pilot VSC-HVDC project is expected to support future VSC-HVDC deployments in India, in furtherance of Atmanirbhar Bharat and the India Semiconductor Mission.
Programme Objectives
To establish indigenous capability for the design, development, qualification and pilot deployment of high-voltage SiC MOSFET-based Power Modules, including generation and ownership of core intellectual property (IP) in India, with a framework for its further development of domestic technology and manufacturing ecosystem for critical HVDC converter components. The initiative aims to strengthen HVDC supply-chain indigenization, reduce import dependence, and enable commercialization of indigenous power semiconductor technologies for future HVDC applications.
Considering the substantial HVDC project pipeline planned in the country and the resulting demand for power semiconductor devices, the project offers a clearly defined market opportunity for indigenous power modules. Furthermore, it provides a unique opportunity for field validation of the developed power modules under actual operating conditions, while being supported by a clear commitment for procurement of the first lot of approximately 13,000 validated power modules. Together, these parallel commitments to validation and procurement establish a credible pathway from development to deployment, reduce commercialization risks, accelerate market adoption.
~13,000
Modules committed for pilot procurement
36 months
Development Phase
4
Max. Consortium Partners
Purpose of this Consultation
This Consultation has been prepared to structure the Pre-RFP stakeholder consultation preceding the issuance of the Detailed Request for Participation (RfP) for the above programme. It sets out the specific areas on which stakeholder inputs are sought so that the scope, technical requirements, timelines, evaluation methodology and commercial framework of the Detailed RfP can be appropriately calibrated.
Important: This is a consultation only. It does not constitute a solicitation for financial or final technical bids; no commitments - financial or otherwise - arise from participation in this consultation.
Indicative Programme Timeliness
The end-to-end programme structure, from RfP through pilot deployment, is summarized below.
| Stage | Description |
|---|---|
| RfP by MeitY | Invitation of detailed technical and financial proposals from prospective developers. |
| Expert Committee Review | Technical presentations before the Expert Committee; financial proposals of technically qualified applicants are then evaluated. |
| Finalization & MoU/NDA | Selection based on techno-commercial evaluation; MoU and NDA among all stakeholders. |
| Technical Requirement Finalization | Detailed specifications of power modules and validation criteria finalized with POWERGRID, developer and HVDC OEM for alignment with the valve sub modules for identified pilot 1000 MW VSC-HVDC project. |
| Engineering Samples - Phase I (T+18 months) | 40-50 samples for preliminary design validation and switching tests. |
| Design Iteration & Phase II Samples (T+33 months) | Iterative design improvements followed by 40-50 near-production-ready samples. |
| Valve-Level Testing | Dielectric and Operational type tests at valve level by the HVDC OEM. |
| Supply, Valve Assembly & Pilot Deployment | Supply of qualified modules by semiconductor developer valve manufacturing/assembly; installation, commissioning and performance validation in the pilot project. |
Eligibility and Consortium Framework
Eligible Applicants
A Domestic Company, including Startup (per DPIIT notification or extant norms) and MSME (per MSME Ministry Gazette Notification or extant norms), which is owned and controlled by resident Indian citizens, as defined in the FDI Policy Circular of 2017 or extant norms, is eligible to apply.
A company is considered as 'Owned' by resident Indian citizens if more than 50% of the capital in it is beneficially owned by resident Indian citizens and/or Indian companies, which are ultimately owned and controlled by resident Indian citizens.
For eligibility purposes, these conditions shall apply to the Applicant company, or in the case of a consortium, the lead company.
Consortium Rules
- All members must be registered legal entities in India.
- The Lead Organization bears liability for the entire scope and value of the contract; non-lead partners are liable only for their respective scope of work.
- Maximum 4 partners per consortium, including the Lead Organization.
- Consortium membership changes require prior MeitY approval where partner credentials were relied upon for eligibility.
- A Lead Organization cannot be part of more than one consortium.
- MeitY disburses funds to the Lead Organization, which is responsible for onward disbursal and consolidated utilization certification.
Note: Domestic Companies may apply individually or in consortium. Academic institutions, national laboratories, MNCs and R&D institutions may participate as consortium partners.
Key Guidelines
- Development phase: up to 36 months, followed by up to 6 months for supply of qualified modules for pilot deployment.
- Evaluation: 70% weightage to technical evaluation, 30% to financial evaluation; a minimum 70% technical score is required to proceed to financial evaluation.
- Award: highest combined techno-commercial score; MeitY may offer the award to the next-ranked applicant if the top-ranked applicant declines.
- Funding: MeitY may support up to 50% of approved project cost (subject to scheme guidelines and a ceiling to be specified in the Detailed RfP); the balance cost-sharing structure remains open and is a specific subject for this consultation.
- No financial bids are sought at the CFP stage; the Detailed RfP will separately price (i) design/development/qualification costs and (ii) manufacture and supply of qualified modules for pilot deployment.
Technical Specification
(A) Technical Specification Summary (Base target rating)
| Parameter | Indicative Requirement |
|---|---|
| Max. Drain-Source voltage (Vds, off-state) | 3300 V |
| DC stability voltage | 2600 V |
| Max. continuous drain current (Id) | > 1800 A |
| Module housing | IHM/IHV (190 x 140 mm) |
| Isolation voltage | 6 kV sinusoidal, 1 min |
| Application | HVDC converters |
| Engineering samples for validation | 50 units, split into 2 lots |
| Modules for pilot deployment (VSC B2B HVDC) | ~13000 |
(B) Technical Specification Summary (Higher rating development target)
| Parameter | Indicative Requirement |
|---|---|
| Max. Drain-Source voltage (Vds, off-state) | 4500 V |
| DC stability voltage | 3600 V |
| Max. continuous drain current (Id) | > 1800 A |
| Module housing | IHM/IHV (190 x 140 mm) |
| Isolation voltage | 6 kV sinusoidal, 1 min |
| Application | HVDC converters |
| Engineering samples for validation | 50 units, split into 2 lots |
Scalable Technology Platform: Applicants are expected to demonstrate a scalable technology platform capable of supporting the project targets (3.3 kV and up to 4.5 kV) and providing a credible roadmap towards higher-voltage variants, including 6.5 kV devices.
Design in India
"Designed in India" HVDC SiC power module shall mean a Silicon Carbide (SiC)-based power module for High Voltage Direct Current (HVDC) applications whose principal architecture and majority of the design and development work are undertaken in India, and whose associated intellectual property rights (IPR) are owned and effectively controlled by a company incorporated in India, with revenues arising from such design and IPR accruing to that company.
Such company shall retain independent and unrestricted rights to use, modify, commercialise and license such design and IPR, without any ownership, control or contractual restrictions originating from outside India that materially affect such rights.
Submission of Feedback and Next Steps
Interested companies are invited to participate in the Pre-RFP stakeholder consultation. Please review the key submission details and meeting schedules below:
Query & Response Submission
Submit queries or responses based on
sample questions
to MeitY
(Point of Contact)
by 5 October 2026.
Stakeholder Consultation Sessions
MeitY may convene interaction meetings or pre-bid consultation sessions on 9 October 2026 to discuss specific inputs.
Venue
Delhi
Please ensure all submissions reach the designated Point of Contact on or before the deadline.
Sample Questions
Technical Feasibility and Roadmap
+
- Is the 3300 V / >1800 A specification, and 4400 V/ >1800 A specification within the IHM/IHV (190 x 140 mm) housing, achievable indigenously within the proposed timeline, and what are the principal technical risks?What indigenous capability currently exists for SiC device design, wafer fabrication, and module packaging/ATMP at this voltage and current class, and what gaps need to be bridged through consortium partnerships or technology transfer?
- Is the proposed higher rating development target of 4.5 kV and TRL roadmap of 6.5 kV variants is realistic within the same programme, or should it be treated as a separate, later phase?
- Is gate driver development included in the project scope, or shall it be undertaken by the HVDC OEM?
- Whether the intrinsic body diode of the SiC MOSFET is sufficient for the intended HVDC application under all operating conditions, or whether the use of a separate anti-parallel diode is required.
Timeline and Milestones
+
- Are the 36-month development phase and the T+18/T+33-month engineering-sample milestones realistic given fabrication, packaging and qualification lead times?
- What sequencing risks exist between design iteration (post Phase I samples) and valve-level testing by the HVDC OEM, and how should schedule float be allocated?
Consortium and Eligibility Structure
+
- Is a 4-partner consortium cap sufficient to cover design, fabrication, ATMP/OSAT and system integration, or should this be reconsidered?
Funding and Commercial Structure
+
- How should the financial proposal separate development-phase costs from manufacture-and-supply costs for the ~13000 module requirement, and what payment-milestone structure is appropriate?
- What ceiling on MeitY's financial support (as a proportion of, or cap on, approved project cost) would be appropriate for the Detailed RfP?
IP, Qualification and Manufacturing Ecosystem
+
- What IP ownership and licensing framework would best balance indigenous IP creation with the practical need for technology partnerships (including with MNCs)?
- What qualification and reliability-testing infrastructure (in India or accessible to Indian applicants) exists today for HVDC-grade SiC power modules, and where are the gaps?
- What manufacturing scale-up support (beyond the pilot quantity) would be needed to make a domestic supply chain viable for future VSC-HVDC projects?
Evaluation Methodology
+
- Is the 70:30 technical-to-financial weightage, with a 70% technical qualifying threshold, appropriate for a programme of this technical complexity?
- What technical evaluation criteria (e.g., TRL, prior SiC experience, fabrication access, qualification infrastructure) should carry the greatest weight?
Point of Contact
Name
Shri Nishit Gupta
Designation
Scientist 'E', MeitY & Director (ISM)
Address
Ministry of Electronics and Information Technology (MeitY),
Electronics Niketan, 6 CGO Complex,
Lodhi Road, New Delhi - 110003
Electronics Niketan, 6 CGO Complex,
Lodhi Road, New Delhi - 110003